В.В. Кведер

Аватар пользователя В.В. Кведер
Место работы, город: 
Черноголовка, Институт физики твердого тела РАН
Должность, звание: 
член-корреспондент РАН

Sedykh, V. D., Rusakov, V. S., Kveder, V. V., Abrosimova, G. E., Kulakov, V. I. Kuritsyna, I. E., “Thermodynamically nonequilibrium states in lanthanum manganite LaMnO3 doped with 5 at % Ba”, PHYSICS OF THE SOLID STATE, 56 (10), 2100-2106 (2014)

V.Sedykh, V.Rusakov, V.Kveder, I. Zver’kova, V. Kulakov, “Fluctuations of structural transformations in La0.95Ba0.05Mn0.9857Fe0.02O3юd under heat treatment”, Materials Letters 96, 82–84 (2013)

Patricia Krenckel, Philipp Saring, Marie A. Falkenberg, Vitaly Kveder, Michael Seibt, «Interaction of iron with extended defects in multicrystalline silicon studied by local gettering», Energy Procedia, 38, 582-588, (2013)

D. Abdelbarey, V. Kveder, W. Schroter, M. Seibt, «Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying», Phys. Stat. Sol. A 210, 771–776 (2013) 

 Michael Seibt and Vitaly Kveder - Chapter 4: “Gettering processes and the role of extended defects” in the book “Advanced Silicon Materials for Photovoltaic Applications”, Edited by Sergio Pizzini, Wiley (John Wiley & Sons Ltd), ISBN 9780470661116, published in 2012

Molodtsova Olga, Irina Aristova, Vitalii Kveder, Martin Knupfer, Clemens Laubschat and Victor Aristov.  “Morphology and Properties of Hybrid Systems Comprising Gold Nanoparticles in CuPc Matrices”. Journal of Physical Science and Application.  2 (6), 166-170 (2012). ISSN:2159-5348

D. Abdelbarey, V. Kveder, W. Schröter, M. Seibt, “Light-induced point defect reactions of residual iron in crystalline silicon after aluminum gettering”, JOURNAL OF APPLIED PHYSICS 108, 043519 (2010)

M.A.Khorosheva, V.I.Orlov, N.V.Abrosimov, and V.V.Kveder, “Determination of the Nonequilibrium Concentration of Vacancies in Silicon Crystals by Measuring the Concentration of Nickel Atoms at Lattice Sites”, Journal of Experimental and Theoretical Physics, (JETP) 110 ( 5), 769–774 (2010)

V. Yu. Aristov, O. V. Molodtsova, C. Laubschat, V. M. Zhilin, I. M. Aristova, V. V. Kveder, M. Knupfer, “Properties of hybrid organic-inorganic systems: Au nanoparticles embedded into an organic CuPc matrix”, APPLIED PHYSICS LETTERS 97, 113103 (2010)

M. Seibt, D. Abdelbarey, V. Kveder, C. Rudolf, P. Saring, L. Stolze, O. Voss, „Structure, chemistry and electrical properties of extended defects in crystalline silicon for photovoltaics”, Phys. Status Solidi C 6, No. 8, 1847–1855 (2009) / DOI 10.1002/pssc.200881470

D. Abdelbarey, V. Kveder, W. Schroeter, M. Seibt, “Aluminum gettering of iron in silicon as a problem of the ternary phase diagram", APPLIED PHYSICS LETTERS 94, 061912 (2009)

V.Kveder, M.Kittler, „ Dislocations in Silicon and D-band Luminescence for Infrared Light Emitters “ in “Advances in Light Emitting Materials" ed. H.Grimmeiss and Monemar, Materials Science Forum  590,  29-56 (2008)

V. Kveder, V. Orlov, M. Khorosheva, M.Seibt, “Influence of the Dislocation Travel Distance on the DLTS Spectra of Dislocations n Cz-Si”, Solid State Phenomena 131-133, 175-181 (2008) 

M. Seibt, A. Sattler, C. Rudolf, O.Voß, V. Kveder, W. Schroeter, “Gettering in Silicon Photovoltaics: Current State and Future Perspectives”, phys. stat. sol. (a) 203, No. 4, 696–713 (2006)

Yu. A. Osip’yan, B. V. Avdonin, K. L. Kagan, R. K. Nikolaev, V. I. Postnov, N. S. Sidorov, D. V. Shakhra, A. F. Shestakov, V. V. Kveder and V. E. Fortov, “Nonmonotonic Variation of the Electrical Conductivity of C60 Fullerene Crystals Dynamically Compressed to 300 kbar as Evidence of Anomalously Strong Reduction of the Energy Barrier of C60 Polymerization at High Pressures”, JETP Letters,  81 (9), 471–474 (2005)

M.V. Badylevich, V.V. Kveder, V.I. Orlov, and Yu.A. Ossipyan “Spin-resonant change of unlocking stress for dislocations in silicon”, phys. stat. sol. (c) 2, 1869–1872 (2005)

M.Seibt, V. Kveder, W.Schroter, O.Voss, “Structural and electrical properties of metal impurities at dislocations in silicon”, phys. stat. sol. (a) 202, No. 5, 911–920 (2005)

V. Kveder, M. Badylevich, W.Schröter, M. Seibt, E. Steinman, A. Izotov, “Silicon light-emitting diodes based on dislocation-related luminescence”, phys. stat. sol. (a) 202, No. 5, 901–910 (2005)

V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt and W. Schroeter “Room-temperature silicon light-emitting diodes based on dislocation luminescence”, APPLIED PHYSICS LETTERS, 84(12), 2106-2108 (2004)

M.V.Badylevich, Yu.L.Iunin., V.V.Kveder, V.I.Orlov, Yu.A.Osipyan ‘Effect of a Magnetic Field on the Starting Stress and Mobility of Individual Dislocations in Silicon’, JETP, 97, 601-605 (2003)

Дополнительные сведения: 

физика конденсированного состояния